12 monthsProgramme duration
25,000 GBPTuition Fee/year
Jan, Apr, Jul, OctStarting Month
Programme overview
Main Subject
Engineering - Electrical and Electronic
Degree
MScr
Study Level
Masters
Study Mode
On Campus
With our enviable reputation for research in Nanotechnology, Swansea University provides an excellent base for your research as a MSc by Research student in Nanoelectronics.
At Swansea University, the emphasis of our nanotechnology research is on the development of applications-driven research and the transfer of technology from the laboratory to the workplace or health centre.
Interaction with industry is a key component of the centre’s strategy. We are a world-leader in power electronics, telecommunications, nanotechnology and biometrics and modelling of nanoelectronic devices research.
Previous projects have included:
- Parallel 3D Finite Element Monte Carlo Device Simulations Of Multigate Transistors
- Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
- Novel GaN HEMT Switches for Power Management: Device Design, Optimization and Reliability Issues
Programme overview
Main Subject
Engineering - Electrical and Electronic
Degree
MScr
Study Level
Masters
Study Mode
On Campus
With our enviable reputation for research in Nanotechnology, Swansea University provides an excellent base for your research as a MSc by Research student in Nanoelectronics.
At Swansea University, the emphasis of our nanotechnology research is on the development of applications-driven research and the transfer of technology from the laboratory to the workplace or health centre.
Interaction with industry is a key component of the centre’s strategy. We are a world-leader in power electronics, telecommunications, nanotechnology and biometrics and modelling of nanoelectronic devices research.
Previous projects have included:
- Parallel 3D Finite Element Monte Carlo Device Simulations Of Multigate Transistors
- Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
- Novel GaN HEMT Switches for Power Management: Device Design, Optimization and Reliability Issues
Admission Requirements
- Candidates are required to submit references or letter(s) of recommendation for acceptance
Tuition fees
Domestic
International
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